Method for improving a stepper signal in a planarized surface over alignment topography

ABSTRACT

A method and resulting structure for reducing refraction and reflection occurring at the interface between adjacent layers of different materials in a semiconductor device, assembly or laminate during an alignment step in a semiconductor device fabrication process. The method comprises forming a planar-surfaced layer of material, having a first index of refraction, over a substrate of the semiconductor device, assembly or laminate. A corrective layer is formed over the planar-surfaced layer and a second layer, having a second index of refraction, is then formed over the corrective layer. The corrective layer is composed of a material having an intermediate index of refraction between the first index of refraction and the second index of refraction. The method can also be modified to include one or more layers of materials and/or intermediate refraction layers interposed between or above any of the aforementioned adjacent layers. The aforementioned method and resulting structures can be further modified by forming an additional layer of material, having the requisite intermediate index of refraction, over an uppermost layer to further reduce reflection occurring at the interface between the uppermost layer and air. The invention is also directed to semiconductor devices, assemblies or laminates formed through the aforementioned methods and incorporating the aforementioned structures.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of application Ser. No. 09/088,322,filed Jun. 1, 1998, pending, which is a divisional of application Ser.No. 08/887,547, filed Jul. 3, 1997, pending.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to a method for improving thesignal strength of light reflected from a buried topographical gratingin a semiconductor device or assembly and the resulting semiconductordevices formed thereby. More specifically, the invention relates to animproved method for reducing reflection caused by differences in therefractive index at the interfaces of adjacent layers of two or morelayers overlying a topographical substrate grating in a semiconductordevice by inserting therebetween a layer of material having a refractiveindex intermediate the refractive indexes of the previously-adjacentlayers of materials to provide greater signal strength to the gratingand back to a detector of the stepper.

2. State of the Art

Increased integration and density of modern semiconductor integratedcircuits requires increasing the accuracy of alignment-based operationsand patterning processes. Specifically, resolution and alignmentaccuracy are basic performance requirements in alignment and exposureapparatuses used in the field of manufacturing semiconductor devices.For example, precise position alignment (i.e., "mask alignment") isrequired each time a mask pattern is reduced in size and transferred toa silicon wafer, other substrate of silicon, or other semiconductormaterial by optical reduction-photolithographic techniques. Likewise, aprecise position alignment is required where a laser trimming apparatusis used to cut sections or levels of the semiconductor on asemiconductor device pattern. These requirements, coupled with theongoing tendency to further miniaturization and higher capacity ofsemiconductor devices, have demanded further improvements in theresolution and alignment accuracy used in today's semiconductormanufacturing processes.

During the manufacturing process, movement of the device or expansionand contraction of a device pattern often produces differences betweenlocations resident in a design-based coordinate system of a devicepattern (hereinafter "coordinate system") and execution according to thecoordinate system by an apparatus responsible for a fabrication step,such as a laser trimming apparatus. That is, unless the coordinatesystem of the device pattern on the silicon wafer coincides with thatactually employed by the fabrication apparatus, it is impossible for thefabrication apparatus to properly align itself onto a precise positionon the wafer and to carry out patterning, additive, or subtractive stepsin the manufacturing process. For example, where a laser trimmingapparatus is used to cut a fuse on a device pattern, the misalignment ofthe laser trimming apparatus results in an improperly-aligned fuseposition, a variation which ultimately results in a cutting failure.

To make an operation executed by the fabrication apparatus preciselycoincide with the coordinate system, a plurality of alignment marks istypically formed on the device pattern. Each of the alignment marks isconstructed of a highly reflective material, such as aluminum, and issurrounded by a field region devoid of reflective material.

Alternatively, where alignment is to an underlying layer (e.g.substrate) topography, a layer of reflective material is deposited overa grating that has been etched into the semiconductor substrate.

In conventional alignment methods utilizing the aforementioned alignmentmarks or reflective layer, the device pattern is scanned with light ofvarying wavelengths emanating from an alignment apparatus (e.g., a laserbeam) along an x- or y- axis of the coordinate system. Variation in theamount of light reflected vertically from the alignment mark orreflective layer is then detected each time the alignment apparatusscans the area overlying an alignment mark or reflective layer. In thismanner, the position of each of the alignment marks or a specific areaof the reflective layer is detected. Based on the detected coordinatesof the alignment marks or reflective layer areas, the position of thefabrication apparatus or device pattern is adjusted so that thefabrication apparatus is positioned precisely at a point that coincideswith the coordinate system of the device pattern.

During the manufacturing process, the alignment marks (or reflectivelayer) are generally covered with one or more layers oflight-transmissive materials, such as polysilicon, resist, insulator,and combinations of other suitable and known films. These interveninglayered materials create optical interference with the beam of lighttraveling between the alignment apparatus and the alignment mark duringalignment steps in subsequent phases of the fabrication process.Specifically, as light passes through the interface between twothin-film layers of dielectric, non-absorbing materials having differentindexes of refraction, reflection of the light passing therethroughincreases. This reflective effect increases as the difference betweenthe indexes of refraction between two adjacent layers increases.

Reflection can cause alignment problems by reducing the incident lightsignal reaching the reflective layer or alignment marks. Additionally,when the light signal is reflected from the reflective layer or thealignment marks back to the alignment apparatus, the strength andresolution of the light signal is further decreased as the signalundergoes additional reflection when it passes through each interfacebetween adjacent layers of overlying material. Several solutions havebeen proposed in the prior art to solve the above-mentioned problemsassociated with alignment inaccuracies due to reflection insemiconductor devices. For example, various alignment systems for usewith projection (photoresist) exposure apparatus have utilized analignment light, having a wavelength that is different from that of anexposing light and that is within the visible wavelength region, inorder to enable observation of a wafer surface during the alignmentprocedure.

Another proposed solution involves formation of a transparentanti-reflective film on a top surface of a resist layer and peeling thefilm after exposure in order to form a fine resist pattern to highdimensional and alignment accuracies. The use of a low index ofrefraction material as the anti-reflective film results in a reductionof reflected light at the interface between the resist layer andanti-reflective film, thus improving the dimensional accuracy of aresist image. An alternative method requires removal of a portion of acover film deposited over the alignment marks to eliminate reflectioncaused by the cover film.

Other proposed approaches have involved modification of an opticalsystem used with the projection exposure apparatus. For instance, U.S.Pat. No. 5,532,871 to Hashimoto et al. discloses a two-wavelengthantireflection film consisting of alternately laminated layers of lowand intermediate refractive index materials which are applied to thefaces of the mirrors and lenses of an optical system.

Although the aforementioned methods eliminate a number of alignmentproblems which occur as a result of reflection between the layeredmaterials, these methods also possess a number of shortcomings. Forexample, the inclusion of anti-reflective layers or films is limited tothe top surface of the uppermost layer (usually a resist in the case ofphotolithography processes). While this approach does provide a moredefined light signal, it does not necessarily improve overlay accuracyof the geometries which are patterned from level to level during thefabrication process. Other previously-identified methods requirespecialized fabrication steps (e.g., removal of the portion of filmcovering the alignment mark) and equipment, which requirements result inincreased fabrication costs and production times.

In view of the foregoing limitations, there is a need in thesemiconductor art for an improved method of reducing reflection of lightcaused by changes in the refractive index at the interface(s) of layeredmaterials in a semiconductor device during the alignment step insemiconductor processing and fabrication. More particularly, there is aneed for an improved method for reducing the aforementioned reflectionin a semiconductor device or assembly having a substrate topographicalgrating.

SUMMARY OF THE INVENTION

The present invention is directed to a method for improving alignment tounderlying topography in a semiconductor device or assembly during analignment step in a semiconductor device fabrication process. The methodcomprises forming a thin, corrective layer of material between layers ofmaterial which would otherwise be mutually adjacent, hereinafter termed"process" layers for clarity. A "thin" layer is any layer of materialwhich is substantially thinner than the adjacent process layers ofmaterials. Process layers comprise layers of material exhibitingdiffering refractive indexes, which are applied on a planar surfaceoverlying a topographical substrate grating during a semiconductordevice fabrication process, and which would normally lie, afterapplication, in mutually adjacent relationship. The thin, correctivelayer is selected from a material having an index of refraction whichlies between the indexes of refraction of the materials forming theprocess layers. The thin, corrective layer is deposited at a specificthickness, which varies depending on the wavelength of the light signalbeing used and the index of refraction of the corrective layer beingused, to maximize transmittance of the stepper signal.

In another embodiment, there is disclosed a method for improving thealignment image intensity emanating from an alignment mark or otherreflective surface (target indicia), deposited on a topographicalsubstrate grating in a multi-layered semiconductor device, during analignment process. The method comprises inserting a thin, correctivelayer of material at the interface between two or more process layers ofmaterial which would otherwise be mutually adjacent. The thin,corrective layer is made of a material having an intermediate index ofrefraction relative to the indexes of refraction of the materialsforming the process layers.

One particular embodiment of the improved method comprises depositing alayer of reflective material over a topographical grating surface of asubstrate of the semiconductor device or assembly. A layer of materialhaving a planar surface is formed over the topographical substrategrating surface. A first process layer of material, having a first indexof refraction, is then formed over the planar-surfaced layer. Acorrective layer is formed over the first process layer and a secondprocess layer, having a second index of refraction, is then formed overthe corrective layer. The corrective layer is composed of a materialhaving an index of refraction that lies between the first index ofrefraction and the second index of refraction.

Where structures including additional material process layers areinvolved, the method can further comprise forming a second correctivelayer, made from a material having a second intermediate index ofrefraction, over the second process layer. A third process layer havinga third index of refraction, is then formed over the second correctivelayer. The second intermediate index of refraction lies between thethird index of refraction and the second index of refraction.

The present method can also be modified to include additional layers ofmaterials comprising refraction modification layers interposed betweenor above any of the aforementioned process layers. Likewise, any of theaforementioned structures can be further modified by forming anadditional layer of material, having the requisite intermediate index ofrefraction, over an uppermost process layer to further reduce reflectionoccurring at the interface between the uppermost process layer and air.

The invention is also directed to semiconductor devices formed throughthe aforementioned methods.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

While the specification concludes with claims particularly pointing outand distinctly claiming that which is regarded as the present invention,the advantages of this invention can be more readily ascertained fromthe following description of the invention when read in conjunction withthe accompanying drawings in which:

FIG. 1 is a cross-sectional view of a prior art structure illustratingreflection of light signals from a reflective layer disposed over atopographical grating on the surface of a substrate;

FIG. 2 is a cross-sectional view of a second prior art structureillustrating the reflection of light signals through a planar-surfacedlayer disposed over a reflective layer overlying a topographicalsubstrate grating;

FIG. 3 is a cross-sectional view of a semiconductor device made inaccordance with the principles of the present invention and illustratingthe reduction of reflection due to the formation of a corrective layerbetween two process layers;

FIG. 4 is a cross-sectional view of a semiconductor device of FIG. 3,illustrates the reduction of reflection due to the formation of acorrective layer between a planar-surfaced layer and a process layer;and

FIGS. 5-9 illustrate the reduction in reflection due to the formation ofcorrective layers in various embodiments of the semiconductor devicesmade in accordance with the principles of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIGS. 1 through 4, it is described how the formation ofcorrective layers of materials according to the principles of thepresent invention reduces reflection and optical scattering of a lightsource reflected from a position-detecting area, target indicia, oralignment mark. FIGS. 1 and 2 illustrate two representative prior artstructures in which a reflective layer 20, made of a material possessinghigh reflectivity (e.g., aluminum and alloys thereof), is formed on atop surface 24 of a substrate 22. The top surface 24 of the substrate 22includes a topographical grating, typically formed by etching of the topsurface 24. It is noted that the topographical grating, as shownthroughout the figures herein, is not drawn to scale as the widths areactually much larger than the heights as shown. These prior artstructures are shown in order to more fully describe the novelty of thepresent invention.

FIG. 1 illustrates one embodiment of the prior art structure wherein aposition-detecting target or reflective layer 20 is formed on the topsurface 24 of the substrate 22. Where the position-detecting targetconsists of a reflective layer which covers only portions of the topsurface 24 of the substrate 22, the substrate 22 is preferably made of amaterial having low reflectivity or anti-reflective properties in orderto increase the resolution of the light signal being reflected from theportions of the reflective layer.

Typically, as shown in FIG. 1, the top surface 24 of the substrate 22 iscoated with a thin layer of material possessing high reflectivity.

Although the present embodiment includes the aforementioned reflectivelayer 20, it is understood that the present structure can exclude theuse of the reflective layer 20 and rely instead on reflection of thebeam of light LI directly from the grated top surface 24 of thesubstrate 22 to create a signal to carry out various alignmentprocesses. This alternative process is particularly well suited wheredetection of varying topography underlying the light-penetrated layersis sought.

As previously mentioned, reflection is caused by differences in theindexes of refraction of the materials forming normally-adjacent processlayers in the instant structures. An increase in the difference betweenthe indexes of refraction of adjacent process layers produces anincrease in the reflected intensity at the interface between theadjacent process layers. Specifically, this reflection causes asubstantial loss of intensity and resolution of the light L1 travelingvertically downward before it reaches the reflective layer 20.Reflection of the light signal also interferes with intensity and phaseinformation traveling vertically upwards from the reflective layer 20 bydecreasing the intensity and resolution of the light L1 reaching thealignment apparatus (e.g., optical elements in a stepper).

During the alignment procedure, the beam of light L1 emanating from thealignment apparatus undergoes substantial reflection R1 at the interfacebetween a first process layer 26, which typically consists of a layer ofresist material, and the air above the process layer 26 (the air-processlayer interface). The light L1 passing through the first process layer26 once again undergoes reflection R2 at the interface between the first20 process layer 26 and a second process layer 28 (first processlayer-second process layer interface), which typically consists ofpolysilicon. The light undergoes reflection R3 a third time at theinterface between the second process layer 28 and the reflective layer20 (the second process-reflective layer interface) or, alternatively, atthe interface between the second process layer 28 and the top surface 24of the substrate 22 (the second process layer-substrate interface) wherea reflective layer or alignment mark is not included. In this fashion. areflected portion of light L1 exits through the first process layer 26as emergent light signals R1, R2, and R3, thus causing opticalinterference.

FIG. 2 shows a second embodiment of a prior art structure which isidentical to the structure of FIG. 1, except that a planar-surfacedlayer 30 is formed over the reflective layer 20. The planar-surfacedlayer 30 can comprise any material having good insulative andlight-transmissive characteristics, such as boro-phospho-silicate glass(BPSG). As described with respect to the embodiment of FIG. 1, a portionof light L1 exits through the first process layer 26 as emergent lightsignals R1, R2, and R3. However, due to the presence of theplanar-surfaced layer 30, emergent light signal R3 is replaced byemergent light signals R4 and R5 reflected from the interface betweenthe second process layer 28 and the planar-surfaced layer 30 (secondprocess layer-planar layer interface) and from the interface between theplanar-surfaced layer 30 and the reflective layer 20 (planarlayer-retlective layer interface), respectively.

Incorporation of the planar-surfaced layer 30 allows for tight processcontrol for all levels while decreasing the required number of maskingsteps. However, highly reliable alignment is still problematic assemiconductor devices and assemblies become smaller in dimension and, asa result, possess more critical alignment tolerances. The differentialin index of refraction between two adjacent materials, such as that seenbetween a planar-surfaced layer 30 made of BPSG and a second processlayer 28 made of polysilicon, creates reflection at the second processlayer-planar layer interface, which leads to signal interference andsignal strength reduction.

FIG. 3 illustrates a preferred embodiment of a structure formedaccording to the principles of the present invention in which acorrective layer 36 is formed over the second process layer 28. Forpurposes of simplicity, elements common to FIGS. 1 and 2 willhereinafter be numbered identically in subsequent figures. FIG. 3 isrepresentative of the structure depicted in FIG. 2, with the addition ofa thin corrective layer. The provision of a corrective layer 36 iseffective for reducing the reflection R2 (FIG. 2) occurring at the firstprocess layer-second process layer interface.

This reduction in reflection occurs even though the light L1 now passesthrough two interfaces, the interface between the first process layer 26and the corrective layer 36 (first process layer-corrective layerinterface) and the interface between the corrective layer 36 and thesecond process layer 28 (corrective layer-second process layerinterface).

This reduced-reflection effect is due to the fact that the combinationof emergent light signal R6 from the first process layer-correctivelayer interface and emergent light signal R7 from the correctivelayer-second process layer interface is of lower intensity than theemergent light signal R2 of FIG. 1 (i.e., R6+R7<R2).

Where the material which forms the first process layer 26 has a firstindex of refraction n₁ and the material which forms the second processlayer 28 has a second index of refraction n₂, the corrective layer 36 ismade from a material having an intermediate index of refraction n₁ thatlies between the first and second indexes of refraction n₁ and n₂ (i.e.n₁ >n_(i) >n₂, or n₁ <n_(i) <n₂). For example, where the first processlayer 26 is made of a resist material having a first index of refractionn₁ of about 1.7, and the second process layer 28 is made of apolysilicon material, having a second index of refraction n₂ of 3.9,suitable materials for use as the corrective layer 36 include anydielectric, non-absorbing, light-transmissive materials having an indexof refraction lying between 1.7 and 3.9. Two such suitable materials forthe corrective layer include silicon nitride and barium-lithium alloys.

Preferably, the corrective layer 36 is made from a material having anindex of refraction equal to the square root of the product of the firstand second indexes of refraction n₁ and n₂ (i.e., (n₁ X n₂)^(1/2)) formaximum reduction of reflection at the first process layer-secondprocess layer interface (prior to the formation of the corrective layer36 therebetween) and to maximize the signal strength of the light L1reaching and being reflected from the reflective layer 20.

The thickness of the material forming the corrective layer 36 alsoaffects the intensity and resolution of the light LI being transmittedthrough the semiconductor device or assembly. Two key variablesaffecting such transmittance are the wavelength λ of the light L1 beingutilized in the alignment step and the index of refraction n_(i) of thecorrective layer 36. The desired corrective layer 36 thickness t_(i) toreduce reflection from surfaces can be calculated in accordance with thefollowing equation, where m is a positive integer:

    t.sub.i =mλ/4n.sub.i

Preferably, m has a value of one (1) in order to form the thinnestpossible layer, so that a semiconductor device or assembly having thesmallest possible dimensions can be formed.

It is recognized that some limitations may exist with respect toformation of the thinnest possible layer. These limitations may be aresult of, for example, limitations inherent in the deposition apparatusor the formation methodology being used, as well as limitations in thesingle-layer thickness achievable with relation to the selected materialor compound, or an inability to efficiently or cost-effectively depositor form such a thin corrective layer with the apparatus or methodologybeing used. In such cases, the corrective layer 36 can be deposited orformed to have a greater thickness than that observed when an "m" valueof one (1) is used. Although the corrective layer 36 formed by thismethod can have a thickness that is based on an integral multiple oft_(i) (i.e., where m equals 2, 3, 4, etc., in the aforementionedequation), a "thin" corrective layer 36, which is substantially thinnerthan the adjacent layers of materials, is desirably formed or deposited.

For example, where the corrective layer 36 is formed between a firstprocess layer 26 made of a resist material, having a first index ofrefraction n₁ of 1.7, and a second process layer 28 made of apolysilicon material, having a second index of refraction n₂ of 3.9, theindex of refraction n_(i) of the corrective layer 36 preferably has avalue of 2.6 (as calculated according to the aforementioned equation).If the light L1 being applied is an ultraviolet light with a wavelengthof 300 nm, an optimal "thin" corrective layer 36 will have a thicknessof about 28.9 nm. Where application of such a thin layer is impractical(or if impossible due to the fabrication apparatus or methodology), thecorrective layer 36 can be formed or deposited to have a thickness equalto a multiple of 28.9 nm (i.e., 57.8 nm, 86.7 nm, 115.6 nm, etc.) toprovide the thinnest practically implementable layer.

FIG. 4 illustrates a preferred embodiment of a structure formedaccording to the principles of the present invention wherein thecorrective layer 36 is formed at the second process layer-planar layerinterface (FIG. 2). The provision of the corrective layer 36 iseffective for reducing the emergent light signal R4 normally occurringat the second process layer-planar layer interface (FIG. 2). Asdescribed above with respect to FIG. 3, the reduction in reflection isdue to the fact that the combination of emergent light signal R8reflected from the interface between the second process layer 26 and thecorrective layer 36 and the emergent light signal R9 reflected from theinterface between the corrective layer 28 and the planar-surfaced layer30 is of lower intensity than the emergent light signal R4 of FIG. 2(i.e., R8+R9<R4). Thus, formation of the corrective layer 36 reduces theintensity of multiple refractive light signals produced in a typicalprior art structure, which, in turn, decreases optical interference whenconducting alignment to underlying semiconductor device or assemblytopography.

The intermediate index of refraction n_(i) of the corrective layer 36lies between the second index of refraction n₂ and a third index ofrefraction n₃ of a material forming the planar-surfaced layer 30 (i.e.,n₂ >n_(i) >n₃, or n₂ <n_(i) <n₃). Preferably, the corrective layer 36 ismade from a material having an index of refraction equal to the squareroot of the product of the second and third indexes of refraction n₂ andn₃ (i.e., (n₂ ×n₃)^(1/2))

FIG. 5 shows a modified embodiment of the structures of FIG. 3 wherein asecond corrective layer 40 is further disposed or formed over theplanar-surfaced layer 30. Consistent with the principles of theinvention, the second corrective layer 40 is made of a material having asecond intermediate index of refraction n_(i2) that lies between thesecond index of refraction n₂ of the second process layer 28 and thethird index of refraction n₃ of the planar-surfaced layer 30 (i.e., n₂>n₂ >n₃, or n₂ <n_(i2) <n₃). In the present embodiment, the secondcorrective layer 40 can be made of a different material than that usedto form the corrective layer 36 disposed between the first process layer26 and the second process layer 28. However, it is understood that thesecond corrective layer 40 and the corrective layer 36 can also be madeof the same material, so long as the index of refraction of the materialused therein lies between the index of refraction of the materialsadjacent to the corrective layers 36 or 40.

As a result, the combination of emergent light signals R6 and R7(reflected from the first process layer-corrective layer interface andthe corrective layer-second process layer interface, respectively) andemergent light signals R8 and R9 (reflected from the second processlayer-second corrective layer interface and the second correctivelayerplanar layer interface, respectively) is of lower intensity thanthe emergent light signals R2 and R4 that would be reflected from thefirst process layer-second process layer interface and second processlayer-planar layer interface, respectively (FIG. 2).

FIG. 6 shows yet another preferred embodiment of a structure madeaccording to the method of the present invention. FIG. 6 shows amodified embodiment of the structure of FIG. 5, wherein a thirdcorrective layer 46 is deposited or formed over the first process layer26. The third corrective layer 46 is made of a material having an indexof refraction that lies between the first index of refraction n₁ of thefirst process layer 26 and the index of refraction of air. The formationof the third corrective layer 46 results in an emergent light signal R10that is of lower intensity than the emergent light signal R1 (FIGS. 1-5)typically reflected from the air-process layer interface. While thisparticular embodiment has been illustrated with reference to thestructure of FIG. 6, it is understood that the deposition of acorrective layer over an uppermost process layer can be employed in anyof the various embodiments illustrated throughout this description.

FIG. 7 illustrates a modified embodiment of the structure of FIG. 3wherein a combination stack of layers 50 is deposited or formed betweenthe reflective layer 20 and the top surface 24 of the substrate 22. Thecombination stack of layers 50 comprise any combination of conformalfilms or layers typically deposited in a process flow. In the instantembodiment, alignment is made to the underlying topography as delineatedby the reflective layer 20 overlying the combination stack of layers 50.As shown in FIG. 8, the combination stack of layers 50 and thereflective layer 20 can be transposed so that the combination stack oflayers 50 is disposed over the reflective layer 20. In this case, thecombination stack of layers 50 comprise a plurality of process layershaving light25 transmissive characteristics. For purposes of simplicity,a single light signal R₁₁ is shown to depict all of the variouscombinations of reflections occurring in the combination stack.

FIG. 9 illustrates yet another modified embodiment of the structure ofFIG. 3 wherein the second process layer 28 is deposited or formed as aplanar-surfaced layer directly over the reflective layer 20. Thisembodiment eliminates the step of forming the planar-surfaced layer 30,as described with reference to FIG. 3, thus reducing the overallthickness of the semiconductor device or assembly and simplifying themethod of fabrication. The instant embodiment further reduces the numberof reflective signals emanating from the device or assembly (i.e.,emergent light signals R4 and R5 from FIG. 3 are now replaced byemergent light signal R12 reflected from the reflective layer-secondprocess layer interface).

Although the preferred embodiments of the present invention have beendisclosed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions, and substitutions arepossible, without departing from the scope and spirit of the inventionas disclosed in the accompanying claims.

What is claimed is:
 1. A semiconductor device structure having reducedrefraction at the interface formed between adjacent layers of differentmaterials, the semiconductor device structure formed by the methodcomprising:providing a base layer having a non-planar surface; forming aplanar-surfaced layer over the non-planar surface of the base layer, theplanar-surfaced layer having a first index of refraction; forming acorrective layer over the planar-surfaced layer, the corrective layerhaving an intermediate index of refraction; and forming a process layerover the corrective layer, the process layer having a second index ofrefraction, wherein the intermediate index of refraction lies betweenthe first index of refraction and the second index of refraction.
 2. Thestructure of claim 1, wherein providing the non-planar surface comprisesforming a substrate having a base layer having a non-planar top surface.3. The structure of claim 2, wherein providing a base layer having anon-planar surface further comprises forming a reflective layer over thenon-planar top surface of the substrate.
 4. The structure of claim 2,wherein providing a base layer having a non-planar surface furthercomprises forming at least one layer of material over the non-planar topsurface of the substrate.
 5. The structure of claim 4, wherein providinga base layer having a non-planar surface further comprises forming areflective layer over the at least one layer of material.
 6. Thestructure of claim 1, wherein forming the planar-surfaced layercomprises forming a planar-surfaced polysilicon layer.
 7. The structureof claim 1, wherein forming the planar-surfaced layer comprises forminga base planar-surfaced layer over the non-planar surface and forming asecond layer over the base planar-surfaced layer.
 8. The structure ofclaim 7, wherein forming the base planar-surfaced layer comprisesforming an insulator layer.
 9. The structure of claim 8, wherein theinsulator layer is boro-phospho-silicate glass.
 10. The structure ofclaim 7, wherein the second layer is a polysilicon layer.
 11. Thestructure of claim 7, wherein the base planar-surfaced layer has a thirdindex of refraction and the second layer has a fourth index ofrefraction, the assembly further comprising forming a second correctivelayer between the base planar-surfaced layer and the second layer, thesecond corrective layer having an index of refraction that lies betweenthe third index of refraction and the fourth index of refraction. 12.The structure of claim 11, wherein the second corrective layer is formedto have a thickness that is smaller than a thickness of the baseplanar-surfaced layer and a thickness of the second layer.
 13. Thestructure of claim 11, wherein the second corrective layer is siliconnitride.
 14. The structure of claim 11, wherein the second correctivelayer is barium-lithium.
 15. The structure of claim 11, wherein thecorrective layer is formed to have a thickness that is smaller than athickness of the planar-surfaced layer and a thickness of the processlayer.
 16. The structure of claim 11, wherein the corrective layer issilicon nitride.
 17. The structure of claim 11, wherein the correctivelayer is barium-lithium.
 18. The structure of claim 11, wherein formingthe process layer comprises forming a resist layer.
 19. The structure ofclaim 11, further comprising forming a third corrective layer over theprocess layer, the third corrective layer having an index of refractionthat lies between an index of refraction of air and the second index ofrefraction.
 20. A semiconductor device structure having improvedalignment to at least one underlying non-planar layer of material in amulti-layered semiconductor device or assembly, the semiconductor devicestructure formed by the method comprising forming at least onecorrective layer of material at the interface of one or more processlayers overlying the at least one non-planar layer of material, thecorrective layer of material having an intermediate index of refractionrelative to the index of refraction of the materials forming theadjacent layers.
 21. The structure of claim 20, further comprisingforming a top corrective layer over an uppermost layer of themulti-layered semiconductor device or assembly, the top corrective layerhaving a second intermediate index of refraction that lies between theindex of refraction of air and a top-layer index of refraction.
 22. Thestructure of claim 20, wherein the corrective layer is formed to have athickness that is smaller than the thickness of the adjacent layers.